1996 Sep 03 4
NXP Semiconductors
Product data sheet
High-speed double diode 1PS184
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0
0 200100
T ( C)amb
o
300
100
200
MBD033
I
F
(mA)
single diode loaded
double diode loaded
(1) Tj
= 150
°C; typical values.
(2) Tj
= 25
°C; typical values.
(3) Tj
= 25
°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage300
0
021
VF
(V)
IF
(mA)
100
200
MBG382
(1) (3)(2)
2handbook, halfpage10
10
200
0
MBG380
100
Tj
(
oC)
IR
(μA)
1
10
2
10
1
(1) (2)
(3)
Fig.4 Reverse current as a function of junction
temperature.
(1) VR
= 80 V; maximum values.
(2) VR
= 80 V; typical values.
(3) VR
= 25 V; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj
= 25
°C.
handbook, halfpage0.8
0
08164
12
VR
(V)
0.6
0.4
0.2
MBG446
Cd
(pF)